Comparison of pnp AlGaAs/GaAs heterojunction bipolar transistor with and without base quasielectric field

Autor:	James S. Harris, D. Costa, William Liu, D. G. Hill
Rok vydání:	2002
Předmět:	Materials science Heterostructure-emitter bipolar transistor business.industry Heterojunction bipolar transistor Transistor Bipolar junction transistor Heterojunction law.invention Gallium arsenide chemistry.chemical_compound Planar chemistry law Etching (microfabrication) Optoelectronics business
Zdroj:	International Technical Digest on Electron Devices.
DOI:	10.1109/iedm.1990.237111
Popis:	Two sets of pnp AlGaAs/GaAs heterojunction bipolar transistors (HBTs) compatible with planar processing have been fabricated using a dual selective etching technique. Both sets of HBTs have a 300-AA strained InGaAs base; one has a built-in base quasielectric field while the other does not. The presence of a built-in base quasielectric field is shown to greatly reduce the base transit time for pnp transistors. The highest measured f/sub T/ and f/sub max/ are 23.3 GHz and 40 GHz, respectively. These are the highest reported values for pnp HBTs, and it is believed that these are limited by parasitic resistances. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f2b6e7a6ec9d15fbf6fd1b1802950eb0 https://doi.org/10.1109/iedm.1990.237111 Zobrazit plný text záznamu