| Autor: |
Nobutaka Magome, Suigen Kyoh, Nobuyuki Irie, Ichiro Mori, Iwao Higashikawa, Koji Muramatsu, Toshikazu Umatate, Soichi Inoue, Katsuya Okumura, Yuuki Ishii, Shun-Ichiro Tanaka |
| Rok vydání: |
2000 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.392096 |
| Popis: |
New pattern generation system, Photomask Repeater, based on i-line stepper has been developed. This system can transfer device patterns from master masks onto a photomask plate with 22mm field size. To print a chip larger than the 22mm field, stitching technology has been developed. Critical dimension error in the region where fields are stitched is the key issue of this technology. Quantification of critical dimension deviation induced by field misplacement was carried out by calculation. Introducing exposure dose gradation, it was reduced less than 1.5nm. From measurements of a real exposed mask this technique proved to be able to stitch fields seamlessly. Major two specifications, pattern placement accuracy and critical dimension uniformity, were evaluated. Both specifications required for 150nm photomasks were fully satisfied. Availability of the photomask repeater to memory device and system on chip is discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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