Developing a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination
| Autor: | J. Klatt, Todd Thibeault, Akshey Sehgal, Craig Printy, Scott Ruby, Jamal Ramdani, Hsin Hsiung Huang |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Metallurgy Transistor Process (computing) chemistry.chemical_element Contamination Condensed Matter Physics Atomic and Molecular Physics and Optics Die (integrated circuit) law.invention chemistry Volume (thermodynamics) Molybdenum law Optoelectronics General Materials Science Wafer business Layer (electronics) |
| Zdroj: | Solid State Phenomena. :127-130 |
| ISSN: | 1662-9779 |
| Popis: | This work details the investigation of potential problems in Complimentary BiCMOS technology, especially PNP transistors arrays. Optical examination of the wafer revealed defects in the P Buried Layer (PBL) areas of the die. Electrical testing correlated these PBL defects to PNP array current leakage. As the PBL module is completed very early on in the process, we devised a shortloop (SL) to reproduce these defects and identify the root cause of current leakage. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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