Demonstration of SiC Pressure Sensors at 750 °C
| Autor: | Robert S. Okojie, Dorothy Lukco, Ender Savrun, Vu Nguyen |
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| Rok vydání: | 2014 |
| Předmět: |
Microelectromechanical systems
Materials science Silicon business.industry Electrical engineering Thermoacoustics chemistry.chemical_element Pressure sensor chemistry.chemical_compound chemistry Combustor Silicon carbide Pharmacology (medical) Composite material Combustion chamber business Sensitivity (electronics) |
| Zdroj: | Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000028-000032 |
| ISSN: | 2380-4491 |
| DOI: | 10.4071/hitec-ta21 |
| Popis: | We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 °C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 °C, eventually achieving near or up to 100 % of the room temperature values at 750 °C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 °C dropped by about 60 %, full recovery was achieved at 750 °C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics. |
| Databáze: | OpenAIRE |
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