Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field
| Autor: | Hakim Tahi, Cherifa Tahanout, Boualem Djezzar, Sidi Mohammed Merah, Mohamed Boubaaya, Bacharia Nadji, Nadia Saoula |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Negative-bias temperature instability Materials science Condensed matter physics 020208 electrical & electronic engineering Transistor Analytical chemistry Oxide 02 engineering and technology 01 natural sciences Electronic Optical and Magnetic Materials Magnetic field Power (physics) law.invention Stress (mechanics) chemistry.chemical_compound chemistry law Low magnetic field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Degradation (geology) Electrical and Electronic Engineering Safety Risk Reliability and Quality |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 17:99-105 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2017.2666260 |
| Popis: | In this paper, we report an experimental evidence of the impact of applied a low magnetic field ( ${B ) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both interface ( ${\Delta }{N_{it}}$ ) and oxide trap ( ${\Delta }{N_{ot}}$ ) induced by NBTI stress are reduced by applying the magnetic field. This reducing is more pronounced as the magnetic field is high. However, the dynamic of interface trap during stress and recovery phase is not affected by the applied magnetic field. While, the dynamic of oxide trap is affected in both stress and recovery phases. |
| Databáze: | OpenAIRE |
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