Effect of He+ ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures
| Autor: | E. D. Pavlova, N. S. Volkova, I. A. Karpovich, A. P. Gorshkov |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed Matter::Other business.industry Physics::Medical Physics Heterojunction Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Condensed Matter::Materials Science Ion implantation Quantum dot Optoelectronics Metalorganic vapour phase epitaxy business Quantum well |
| Zdroj: | Semiconductors. 46:1506-1509 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782612120068 |
| Popis: | The effect of He+ ion implantation on the photosensitivity spectra of InGaAs/GaAs quantum well and InAs/GaAs quantum dot heterostructures grown by metalorganic chemical vapor deposition (MOCVD) epitaxy is studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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