Optimization of gate stack parameters towards 3D-SONOS application
| Autor: | G. Van den bosch, Baojun Tang, Ingrid Debusschere, Laurent Breuil, Antonio Arreghini, Gouri Sankar Kar, L. Date, J. Van Houdt, A. Cacciato |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Oxide Time-dependent gate oxide breakdown Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor chemistry.chemical_compound Tunnel effect Stack (abstract data type) chemistry law Gate oxide Optoelectronics Erasure Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 88:1164-1167 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2011.03.140 |
| Popis: | A planar SONOS capacitor was used to optimize different parameters of the gate stack, in view of integration in a 3D cell. It is found that a poly-Si substrate strongly degrades the channel mobility but program and retention are not compromised. The ONO stack is found to scale down to 3/4/5nm for tunnel oxide/trapping nitride/blocking oxide, respectively. FUSI gate could be an interesting option to improve the erase operation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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