Metal-assisted chemical etching of CIGS thin films for grain size analysis
| Autor: | Huu-Ha Loi, Magdalena Parker, Chaowei Xue, Anh Duong |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Scanning electron microscope 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Isotropic etching Copper indium gallium selenide solar cells Grain size Crystallography Polycrystalline silicon 0103 physical sciences engineering Optoelectronics General Materials Science Grain boundary Thin film 0210 nano-technology business Electron backscatter diffraction |
| Zdroj: | physica status solidi (RRL) - Rapid Research Letters. 10:673-676 |
| ISSN: | 1862-6254 |
| DOI: | 10.1002/pssr.201600240 |
| Popis: | The CIGS thin film surface morphology before and after the wet chemical etching. Grain boundaries are well defined after the processing.Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. |
| Databáze: | OpenAIRE |
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