Highest efficiency rapid thermal processed multicrystalline silicon solar cells
| Autor: | Sophie Noël, J.C. Muller, H. Lautenschlager |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Silicon
Passivation Renewable Energy Sustainability and the Environment Annealing (metallurgy) business.industry Chemistry Energy conversion efficiency Electrical engineering chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Rapid thermal processing Thermal Optoelectronics Electrical and Electronic Engineering business Common emitter Silicon solar cell |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 9:41-47 |
| ISSN: | 1062-7995 |
| DOI: | 10.1002/pip.353 |
| Popis: | The formation of pn junctions and surface passivation by rapid thermal processing is being proved as a new and competitive method for silicon solar cell production. As the main process mechanisms are enhanced, the total process time at high temperature can be kept in the minute range, for the realization of emitter, back surface field (BSF) and surface passivation. In this work, we demonstrate for the first time that this knowledge, avoiding any in-situ annealing step acquired on the sc-Si, can also be applied on industrial mc-Si (Polix©) without bulk degradation, leading to a record conversion efficiency of 16·7%. Copyright © 2001 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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