Molecular beam epitaxy growth of lattice-matched multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

Autor:	A. Hase, J. Böttcher, Harald Künzel, C. Kaden, Heinz Schweizer, V. Hofsäss
Rok vydání:	1995
Předmět:	Distributed feedback laser business.industry Chemistry Crystal growth Condensed Matter Physics Laser law.invention Semiconductor laser theory Inorganic Chemistry Planar Optics law Materials Chemistry business Refractive index Diffraction grating Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 150:1323-1327
ISSN:	0022-0248
DOI:	10.1016/0022-0248(95)80153-4
Popis:	AlGaInAs GaInAs multiple quantum wells (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI). Suitable molecular beam epitaxy (MBE) growth conditions are elaborated to achieve 1.3 μm AlGaInAs GaInAs MQW distributed feedback (DFB) lasers taking advantage of the capability of the MIEI process to define the gratings. High-quality MBE overgrowth on AlGaInAs necessary for device completion after H∗ radical treatment is demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f237851d2199f5032d9e63ccafc32103 https://doi.org/10.1016/0022-0248(95)80153-4 Zobrazit plný text záznamu Full Text from ScienceDirect