Selective area MOVPE growth for device integration

Autor:	P.J. Williams, A.J. Moseley, N. Maung, J. Thompson, P.M. Charles, A.K. Wood, N. Carr
Rok vydání:	1993
Předmět:	Distributed feedback laser business.industry Chemistry Heterojunction Substrate (electronics) High-electron-mobility transistor Condensed Matter Physics Waveguide (optics) Photodiode law.invention Inorganic Chemistry Planar Optics law Materials Chemistry Metalorganic vapour phase epitaxy business
Zdroj:	Journal of Crystal Growth. 126:317-324
ISSN:	0022-0248
DOI:	10.1016/0022-0248(93)90039-y
Popis:	Two techniques are described to achieve selective area MOVPE growth of InP based materials which are suitable for device integration. Using a three-stage growth process, the integration of a DFB laser and a ridge waveguide via a butt junction has been evaluated structurally and optically. The feasibility of a one-stage growth process for the integration of a PIN photodiode and HEMT, lattice-matched to InP using a contoured substrate to accomodate the difference in the device thickness and give a planar technology, has also been assessed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f2363acaaef018c95159349fe2311f44 https://doi.org/10.1016/0022-0248(93)90039-y Zobrazit plný text záznamu