Radiation Influence Comparison between SiC JMOS and DMOS
| Autor: | Chih-Fang Huang, Chien-Chung Hung, Jheng-Yi Jiang, Chwan-Ying Lee, Lurng-Shehng Lee, Der-Sheng Chao, Fu-Jen Hsu, Wen-Bin Yeh, Kuo-Ting Chu |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Schottky diode 02 engineering and technology Radiation Chip 01 natural sciences Engineering physics 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Irradiation Aerospace business Radiation hardening Diode |
| Zdroj: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | Currently, Schottky diode embedded SiC MOSFETs is a popular topic because of its remarkable intrinsic diode behavior and bipolar-degradation-free operation. JMOS is one of them that exhibits much higher chip area efficiency, which means there is neither additional process nor more active-area requirement. Meanwhile, SiC is also an excellent material to adapt to many harsh environments. In some applications, such as aerospace, military, and high-energy facilities, radiation hardening is a crucial concern. In this work, an over 1,000krad of Co-60 gamma-ray irradiation experiment has been done. The general comparison between JMOS and DMOS including static and dynamic behaviors with radiation dependency will also be discussed in this paper. In short, no significant difference in radiation hardness is detected between JMOS and DMOS. |
| Databáze: | OpenAIRE |
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