Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping

Autor:	C. H. Grein, J. Zhao, E. Jiang, G. Badano, S. Sivananthan, James W. Garland, Yong Chang
Rok vydání:	2005
Předmět:	Fabrication Microscope Infrared business.industry Chemistry Condensed Matter Physics Characterization (materials science) law.invention Inorganic Chemistry Optics law Materials Chemistry Wafer Infrared detector Infrared microscopy business Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 277:78-84
ISSN:	0022-0248
Popis:	A technique based on infrared microscopy and the automatic fitting of the transmissivity curves has been developed to measure the composition and thickness distributions of HgCdTe wafers grown by molecular beam epitaxy (MBE). This technique has the ability to handle many measuring points, provides high spatial resolution, and can be used for the routine characterization of the uniformity of HgCdTe grown on CdZnTe and Si-based substrates. The mapping measurements both are helpful for infrared detector fabrication and can help MBE growers adjust growth conditions and optimize equipment configurations to grow large area uniform HgCdTe material. The reason that limits the enhancement of uniformity was also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f227c120a15a6a31a42f79f5cfbf84b1 https://doi.org/10.1016/j.jcrysgro.2005.01.051 Zobrazit plný text záznamu Full Text from ScienceDirect