Comprehensive device reliability and oxide traps distribution analysis by the low frequency noise in ultra-thin body SOI (UTBSOI) MOSFETs

Autor:	Wei-Yi Chang, Chun-Hung Soh, Yao-Hsiang Yang, Wen-Kuan Yeh, Cheng-Li Lin, Chien-Ting Lin, Chun-Ming Wu, Yen-Lun Huang
Rok vydání:	2013
Předmět:	Electron mobility Materials science business.industry Infrasound Oxide Analytical chemistry Silicon on insulator Threshold voltage Stress (mechanics) chemistry.chemical_compound Reliability (semiconductor) chemistry MOSFET Optoelectronics business
Zdroj:	2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC).
Popis:	This study investigates the device characteristics of the ultra-thin body (UTB) SOI MOSFETs with different channel lengths. The device reliability, body charging effect, and oxide trap distribution are also studied. The P-type device reveals more degradation of the threshold voltage than that of N-type device as decreasing the channel length. For the effect of body charging on ultra-thin Si-body, the N-type device appears more serious body-charging effect than that of the P-type device. Additionally, the N-type body-tied UTB SOI MOSFETs w/ and w/o body grounded shows the bulk oxide trap (NBOT) at the SiO2/Si interface is larger than that at poly-Si-gate/SiO2 interface. Additionally, the N-type device reveals the correlated-carrier number mobility fluctuation. For P-type device, the similar carrier-fluctuation appears in the HCI test, but the BTI stress enhances the phenomenon of the carrier-number fluctuation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f225ca2485c2465fa8ccdda614ef68f5 https://doi.org/10.1109/nmdc.2013.6707460 Zobrazit plný text záznamu