Highly porous interlayer dielectric for interconnect capacitance reduction

Autor:	Robert H. Havemann, Kelly J. Taylor, John W. Fattaruso, Thomas R. Seha, S. P. Jeng, Mi-Chang Chang
Rok vydání:	2002
Předmět:	Capacitive coupling Permittivity Materials science business.industry Relative permittivity Dielectric Capacitance chemistry.chemical_compound Semiconductor chemistry Electronic engineering Optoelectronics business Porous medium Hydrogen silsesquioxane
Zdroj:	1995 Symposium on VLSI Technology. Digest of Technical Papers.
DOI:	10.1109/vlsit.1995.520858
Popis:	Hydrogen silsesquioxane (HSQ) is a low density material for intra-metal gapfill, that offers low permittivity for interconnect capacitance reduction. Films with k as low as /spl sim/2.2 preferentially form between tightly-spaced metal leads when cured at low temperature (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f223cda008c1a2d55c1cfa39cb93f62d https://doi.org/10.1109/vlsit.1995.520858 Zobrazit plný text záznamu