Photocurrent enhancement and magnetoresistance in indium phosphide single nanowire by zinc doping
| Autor: | Adenilson J. Chiquito, Edson Rafael Cardozo de Oliveira, Marcio D. Teodoro, I. M. Costa, Fernando Maia de Oliveira, Gilmar E. Marques |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Photocurrent
Materials science Acoustics and Ultrasonics Magnetoresistance business.industry Doping Nanowire 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Variable-range hopping Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Indium phosphide Optoelectronics Electrical measurements 010306 general physics 0210 nano-technology business Ohmic contact |
| Zdroj: | Journal of Physics D: Applied Physics. 51:255106 |
| ISSN: | 1361-6463 0022-3727 |
| Popis: | We report the fabrication of intrinsic and Zn-doped InP single nanowire devices by the vapor–liquid–solid and photolithography techniques. Nanowires with a zincblend structure around 100 nm in radius and length at the micrometer scale were readily observed. Electrical measurements of samples containing single nanowires revealed Ohmic and Schottky behavior for the intrinsic and Zn-doped InP devices respectively. The Zn-doped InP device exhibited a thermal and optical dependence with high photosensitivity, whose main conduction mechanism for temperatures ranging from 160 K to 300 K was verified to be variable range hopping, displaying a hopping distance on the order of 240 nm at a low temperature. Strong temperature-dependent positive magnetoresistance was verified for this device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|