Characterization of epitaxial layers by the depth dependence of boron diffusivity

Autor: Dirk J. Gravesteijn, P. C. Zalm, K. J. van Oostrum, W.B. de Boer, J. W. F. Maes
Rok vydání: 1992
Předmět:
Zdroj: Applied Physics Letters. 61:1513-1515
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.107533
Popis: Differences in boron diffusivity have been used to characterize epitaxially grown silicon layers. After oxidation‐enhanced diffusion of boron spikes, a decrease in boron diffusivity with increasing depth is observed in epitaxial silicon layers grown by molecular beam epitaxy and fast gas switching vapor deposition, in contrast to layers grown by low‐temperature chemical vapor deposition. The reduced boron diffusivity is thought to be caused by an oversaturation of vacancy defects, acting as interstitial traps, suppressing the diffusion of boron.
Databáze: OpenAIRE