Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices
| Autor: | Ratan Debnath, Abhishek Motayed, Ashfaque Hossain Khan, Mulpuri V. Rao |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Mean time between failures Materials science business.industry Failure rate Gallium nitride Temperature cycling 01 natural sciences Highly accelerated stress test Die (integrated circuit) Electronic Optical and Magnetic Materials Stress (mechanics) chemistry.chemical_compound chemistry High-temperature operating life 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 20:742-747 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2020.3028786 |
| Popis: | In this work, sensor die/process and packaging reliabilities of metal-oxide/GaN nanowire-based gas sensors have been studied for the first time, using industry standard accelerated lifetime tests, such as- High Temperature Operating Life, High Temperature Storage Life, Temperature Cycling Test and Highly Accelerated Stress Test. The metal-oxide functionalization used for sensing ethanol exposure in this study is ZnO. For all the tests, sample ZnO/GaN devices have been exposed to 500 ppm of ethanol in dry air at room temperature (20°C) to observe and record the degradation of signal to noise ratio (SNR) as a function of stress time and number of thermal cycles. Although no complete device failure was observed in any of the performed tests, gas sensing response kept decreasing gradually due to increasing stress. The lowering of the sensor response is believed to be due to gradual phase transformation of the receptor ZnO and baseline resistance increase. The method for estimating failure rate and lifetime of sensor devices has been discussed in detail. Using statistical data from the performed accelerated stress tests, chi-square distribution has been implemented to predict the failure rate and lifetime of GaN nanostructured sensor devices. The mean-time-to-failure (MTTF) of the stressed devices of this study is about 4 years. |
| Databáze: | OpenAIRE |
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