Direct chemical vapor deposition growth of tunable HfSiON films by a new precursor combination
| Autor: | Harold Stemper, Ashutosh Misra, Matthew L. Fisher, Bin Xia |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon oxynitride Hybrid physical-chemical vapor deposition Mechanical Engineering Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Pulsed laser deposition chemistry.chemical_compound Carbon film chemistry Chemical engineering Mechanics of Materials Plasma-enhanced chemical vapor deposition General Materials Science Thin film |
| Zdroj: | Journal of Materials Research. 22:1024-1028 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.2007.0119 |
| Popis: | Hafnium silicon oxynitride (HfSiON) films were deposited on 200-mm silicon substrates by low-pressure chemical vapor deposition (LPCVD) from a combination of trisilylamine (TSA) and tetrakis(diethylamido)hafnium(IV) (TDEAH) in the temperature range 450 to 575 °C. A highly volatile and carbon-free silicon precursor TSA was used to deposit HfSiON films for the first time. HfSiON films were deposited in a single step with no need of a post-treatment process for nitrogen incorporation. The film composition was tuned in a wide compositional range, and high growth rates were achieved. NH3 was found to have profound effects on film growth rate, metal ratio (Si% or Hf%), nitrogen incorporation, and carbon residue in the films. |
| Databáze: | OpenAIRE |
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