Role of substrate temperature and tellurium flux on the electrical and optical properties of MBE grown GeTe and Sb2Te3 thin films on GaAs (100)
| Autor: | Adrian Podpirka, David Shrekenhamer, Jarod C. Gagnon, Jonathan M. Pierce, Christine M. Zgrabik |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Chalcogenide Process Chemistry and Technology Superlattice chemistry.chemical_element Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Phase-change memory symbols.namesake chemistry.chemical_compound chemistry Materials Chemistry symbols Optoelectronics Electrical and Electronic Engineering Thin film van der Waals force Tellurium business Instrumentation Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology B. 38:032210 |
| ISSN: | 2166-2754 2166-2746 |
| Popis: | Van der Waals layered GeTe/Sb2Te3 chalcogenide superlattices have demonstrated outstanding performance for use in dynamic resistive memories in what is known as interfacial phase change memory devices due to their low power requirement and fast switching. These devices are made from the periodic stacking of nanometer thick crystalline layers of chalcogenide phase change materials. The mechanism for this transition is still debated, though it varies from that of traditional phase change melt-quench transition observed in singular layers of GeTe and Sb2Te3. In order to better understand the mechanism and behavior of this transition, a thorough study on each constituent layer and the parameters for growth via molecular beam epitaxy was performed. In this work, the authors show the effect of tellurium overpressure and substrate temperature on the growth of thin film GeTe and Sb2Te3 on (100) GaAs. The authors demonstrate the significant role during growth that tellurium overpressure plays in the transport properties of both GeTe and Sb2Te3, as well as the negligible impact this has on both the structural and optical properties. The highest mobility recorded was 466 cm2/V s with a p-type bulk carrier concentration of 1.5 × 1019 cm−3 in Sb2Te3. For GeTe, the highest achieved was 55 cm2/V s at a p-type bulk carrier concentration of 8.6 × 1020 cm−3. The authors discuss transport properties, orientation, and crystal structure and the parameters needed to achieve high mobility chalcogenide thin films. |
| Databáze: | OpenAIRE |
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