Optical channel waveguides in AlGaAs multiple-quantum-well structures formed by focused ion-beam-induced compositional mixing
| Autor: | Mukesh Kumar, G.N. DeBrabander, Ahn Goo Choo, P. Chen, V. Gupta, Stephen C. Smith, I.T. Boyd, Howard E. Jackson, Andrew J. Steckl, Robert D. Burnham |
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| Rok vydání: | 1993 |
| Předmět: |
Microprobe
Materials science business.industry Focused ion beam Waveguide (optics) Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Gallium arsenide symbols.namesake chemistry.chemical_compound Ion implantation Optics chemistry symbols Optoelectronics Electrical and Electronic Engineering business Raman spectroscopy Mixing (physics) |
| Zdroj: | IEEE Photonics Technology Letters. 5:435-438 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.212691 |
| Popis: | Optical channel waveguiding in a AlGaAs multiple-quantum-well structure was demonstrated in a channel formed by compositional mixing induced by focused ion beam (FIB) implantation. Selective mixing was achieved by FIB implanting Si/sup ++/ with a dose of 5*10/sup 14/ cm/sup -2/ followed by rapid thermal annealing at 950 degrees C for 10 s. Raman microprobe spectra were used to characterize the lateral variation of compositional mixing. Channel waveguide loss of 17.2 dB/cm was measured, compared to 10-12 dB/cm measured for planar waveguiding. Mode field pattern measurements indicate that a change in effective index of 2.7*10/sup -4/ was induced, corresponding to an approximate mixing depth of 270 nm. > |
| Databáze: | OpenAIRE |
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