Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency

Autor:	Michael E. Hoenk, Frank J. Grunthaner, P. J. Grunthaner, Hsin-Fu Tseng, Robert W. Terhune, Masoud M. Fattahi
Rok vydání:	1992
Předmět:	Physics and Astronomy (miscellaneous) Silicon Passivation business.industry Doping Analytical chemistry chemistry.chemical_element medicine.disease_cause Epitaxy chemistry medicine Optoelectronics Quantum efficiency Thin film business Ultraviolet Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 61:1084-1086
ISSN:	1077-3118 0003-6951
Popis:	Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f1f27a5fc213125d6069f0ac55c8e758 https://doi.org/10.1063/1.107675 Zobrazit plný text záznamu