Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure
Autor: | Ping Yu Kuei, Ching Chi Lin, Shu Liang Lin, Atanu Das, Nan Hung Cheng, Yi Cherng Ferng, L. B. Chang, Yung-Fang Chen |
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Rok vydání: | 2019 |
Předmět: |
Electrostatic discharge
Materials science business.industry Insulator (electricity) Gallium nitride High-electron-mobility transistor law.invention Metal Capacitor chemistry.chemical_compound chemistry law visual_art visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering business Varicap Flip chip |
Zdroj: | IEEJ Transactions on Electrical and Electronic Engineering. 14:1091-1094 |
ISSN: | 1931-4981 1931-4973 |
DOI: | 10.1002/tee.22904 |
Databáze: | OpenAIRE |
Externí odkaz: |