Local Auger effects at point defects in silicon

Autor:	M. Kleverman, H.G. Grimmeiss
Rok vydání:	1988
Předmět:	Coupling Materials science Auger effect Silicon chemistry.chemical_element Charge (physics) General Chemistry Zinc Condensed Matter Physics Crystallographic defect Auger symbols.namesake Chalcogen chemistry symbols General Materials Science Atomic physics
Zdroj:	Journal of Physics and Chemistry of Solids. 49:615-626
ISSN:	0022-3697
DOI:	10.1016/0022-3697(88)90192-8
Popis:	Taking sulfur-doped silicon as an example it is shown that the local Auger effect is one of those rare effects which can be used to identify two energy levels as different charge states of the same center. While the coupling of two particular energy levels could be demonstrated for some of the chalcogens in silicon, similar results have hitherto not been obtained for zinc.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f1eac019ec5ef19cc9d95d605c0f25a2 https://doi.org/10.1016/0022-3697(88)90192-8 Zobrazit plný text záznamu