Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C
| Autor: | Paul Stradins, Howard M. Branz, David L. Young, Charles W. Teplin, Ina T. Martin, Manuel J. Romero, Robert C. Reedy, Kirstin Alberi, Carolyn Beall, Maxim Shub |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon Inorganic chemistry Analytical chemistry chemistry.chemical_element Substrate (electronics) Chemical vapor deposition Combustion chemical vapor deposition Epitaxy Silane chemistry.chemical_compound chemistry Metalorganic vapour phase epitaxy Dislocation |
| Zdroj: | Applied Physics Letters. 96:201901 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.3422474 |
| Popis: | We construct a phase diagram for silicon layer growth on (001) Si by hot-wire chemical vapor deposition (HWCVD), for rates from 10 to 150 nm/min and for substrate temperatures from 500 to 800 °C. Our results show that a mixed mono and dihydride surface termination during growth causes polycrystalline growth; some H-free sites are needed for epitaxy. For epitaxial films (T>620 °C), the dislocation density decreases with increasing growth temperature because of reduced O contamination of the surface. The best HWCVD epitaxial layers have dislocation densities of 105 cm−2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|