Influence of N2 flow rate on the mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering
| Autor: | Xinlu Deng, Jun Xu, Wen-Qi Lu, Wanyu Ding, Chuang Dong |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Silicon
Chemistry Metals and Alloys Analytical chemistry Infrared spectroscopy chemistry.chemical_element Surfaces and Interfaces Sputter deposition Electron cyclotron resonance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Volumetric flow rate chemistry.chemical_compound Silicon nitride Physical vapor deposition Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 518:2077-2081 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2009.07.191 |
| Popis: | Hydrogen-free amorphous silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance plasma-enhanced unbalance magnetron sputtering. Varying the N2 flow rate, SiNx films with different properties were obtained. Characterization by Fourier-transform infrared spectrometry revealed the presence of Si–N and Si–O bonds in the films. Growth rates from 1.0 to 4.8 nm/min were determined by surface profiler. Optical emission spectroscopy showed the N element in plasma mainly existed as N+ species and N2+ species with 2 and 20 sccm N2 flow rate, respectively. With these results, the chemical composition and the mechanical properties of SiNx films strongly depended on the state of N element in plasma, which in turn was controlled by N2 flow rate. Finally, the film deposited with 2 sccm N2 flow rate showed no visible marks after immersed in etchant [6.7% Ce(NH4)2(NO3)6 and 93.3% H2O by weight] for 22 h and wear test for 20 min, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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