Superior n-MOSFET Performance by Optimal Stress Design
| Autor: | Ling-Yen Yeh, T.-L. Lee, Ming-Han Liao, Mong-Song Liang, Chee-Wee Liu |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Optimal design
Electron mobility Materials science business.industry Circuit design Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials Stress (mechanics) Computer Science::Emerging Technologies Ballistic conduction Logic gate MOSFET Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 29:402-404 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2008.918420 |
| Popis: | The high-performance n-FET is achieved by ultra- high-stress contact-etch-stop-layer stressor and optimal design of device dimensions. The biaxial-like stress resulting from a high symmetry in device dimension (gate width/gate length ratio is close to one) has the better performance in terms of Ion enhancement, ballistic efficiency, and injection velocity. The multichannel device with a smaller gate width/gate length ratio is proposed to enhance the device performance in the circuit design for the n-FET. The characteristics of the detailed stress simulation and the ballistic-transport measurement reported in this letter suggest that these results remain valid for ballistic-transport devices with 10-20-nm gate length. The stress distribution with different device dimensions was simulated by 3-D finite-element mechanical-stress simulation, and the mobility, ballistic efficiency, and injection velocity were calculated theoretically based on stress characteristics. |
| Databáze: | OpenAIRE |
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