High-bias negative differential resistance effect in pure, doped and co-doped carbon nanotubes connected to boron nitride nanotubes
| Autor: | Ankita Joshi, C. N. Ramachandran |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Band gap 02 engineering and technology Carbon nanotube 010402 general chemistry 01 natural sciences law.invention Condensed Matter::Materials Science chemistry.chemical_compound law Condensed Matter::Superconductivity Dopant business.industry Doping Semiconductor device Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials chemistry Boron nitride Electrode Density of states Optoelectronics Condensed Matter::Strongly Correlated Electrons 0210 nano-technology business |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 113:1-7 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2019.04.021 |
| Popis: | The electronic and transport properties of various devices made of carbon nanotube (CNT), B, Al, N-doped and BN, AlN co-doped carbon nanotubes sandwiched between boron nitride nanotube (BNNT) electrodes were investigated using combined density functional theoretical and the non-equilibrium Green's function (DFT-NEGF) methods. The undoped, doped and co-doped CNTs exhibit low band gap which make them suitable for semiconductor devices. The transport properties such as transmission spectrum, density of states (DOS) and current-voltage characteristic of all the devices were determined. A negative differential resistance (NDR) is observed for undoped, doped and co-doped CNTs at high bias (±1 to ±3 V). It is revealed that the NDR region as well as the peak-to-valley ratio of CNT can be tuned by doping B, N, Al, BN and AlN. The rectification ratio of CNT varies with the type of dopant atoms. The NDR effect in the current-voltage curve along with high rectification ratio proffer the potential applications of doped and co-doped CNTs in nano-rectifiers. |
| Databáze: | OpenAIRE |
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