Transient photocapacitance spectroscopy of Al-As/sub 2/Se/sub 3/ junction

Autor:	S.D. Shutov, I.A. Vasiliev
Rok vydání:	2002
Předmět:	Range (particle radiation) Deep-level transient spectroscopy Chemistry Relaxation (NMR) Analytical chemistry Transient (oscillation) Photoionization Spectroscopy Molecular physics
Zdroj:	1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.
DOI:	10.1109/smicnd.1996.557420
Popis:	From long-term (20 to 1000 s) photocapacitance relaxation measurements on an Al-As/sub 2/Se/sub 3/ junction the spectral dependence of density and photoionization cross section of the gap states was derived in the range from 1.35 to 1.92 eV. Two photoionization thresholds at 1.35 and 1.53 eV have been found and ascribed to the gap states of charged defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f1bd10682212c1c71b5e1d73f3b16ae6 https://doi.org/10.1109/smicnd.1996.557420 Zobrazit plný text záznamu