Technology Computer-Aided Design (TCAD) Feasibility Study of Scaling SiGe HBTs
Autor: | Andreas D. Stricker, D. L. Harame, Renata Camillo-Castillo, Jeffrey B. Johnson, Alvin J. Joseph, Aravind Appaswarmy, Ramana M. Malladi |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | ECS Transactions. 33:319-329 |
ISSN: | 1938-6737 1938-5862 |
DOI: | 10.1149/1.3487562 |
Popis: | Technology computer-aided design (TCAD) feasibility studies for for scaling a SiGe-based NPN with cutoff frequencies, fT/fMAX of 200/250GHz were conducted, in which the critical process and device design components were self-consistently addressed. The calibrated 200/250GHz calibration was verified by utilization for scaling to a 300GHz performance level, which was subsequently used as the baseline for scaling to a 500 and 630GHz fT performance level. Comparison of the transit time components reveal the base and collector-base transit times as being the predominant electron delay components for performance levels less than 500GHz. At 630GHz the device was observed to be limited primarily by the collector-base transit time. |
Databáze: | OpenAIRE |
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