High Speed TCAM Design using SRAM Cell Stability

Autor:	Eun Hye Ahn, Jun Rim Choi
Rok vydání:	2013
Předmět:	Data processing Hardware_MEMORYSTRUCTURES CMOS Computer science Sram cell Electronic engineering Stability (learning theory) Static noise margin Static random-access memory Content-addressable memory Voltage
Zdroj:	Journal of the Korea Industrial Information System Society. 18:19-23
ISSN:	1229-3741
DOI:	10.9723/jksiis.2013.18.5.019
Popis:	This paper deals with the analysis of 6T SRAM cell stability for Hi-speed processing Ternary Content Addressable Memory. The higher the operation frequency, the smaller CMOS technology required in the designed TCAM because the purpose of TCAM is high-speed data processing. Decrease of Supply voltage is one cause of unstable TCAM operation. Thus, We should design TCAM through analysis of SRAM cell stability. In this paper we propose methodology to characterize the Static Noise Margin of 6T SRAM. All simulations of the TCAM have been carried out in 180nm CMOS process technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f1ab9d731e0439e8754e4b2d9049f1d7 https://doi.org/10.9723/jksiis.2013.18.5.019 Zobrazit plný text záznamu