Design, Development and Physics of Silicon Diffused Gauge
| Autor: | K.C. Chhabra, N.H. Godhwani, M.N. Singh |
|---|---|
| Rok vydání: | 1985 |
| Předmět: |
Physics
Silicon business.industry technology industry and agriculture Electrical engineering Linearity chemistry.chemical_element Gauge (firearms) equipment and supplies Pressure sensor Engineering physics Physical Concepts Semiconductor chemistry Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Sensitivity (control systems) Electrical and Electronic Engineering business Strain gauge |
| Zdroj: | IETE Technical Review. 2:214-217 |
| ISSN: | 0974-5971 0256-4602 |
| DOI: | 10.1080/02564602.1985.11437779 |
| Popis: | The advances in solid-state technology are much more rapid in the case of silicon than in other semiconductors. Silicon strain gauges using piezo-resistive effect in semiconductor are replacing metal strain gauges because of their sensitivity, linearity, low cost and low power consumption. The fundamental physical concepts and practical design considerations concerning the design of diffused silicon strain sensors are reviewed and their performance in pressure transducer is documented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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