Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications
| Autor: | Shannon W. Boettcher, Ann L. Greenaway, Jason W. Boucher, Christopher J. Funch, Sebastian Z. Oener |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Renewable Energy Sustainability and the Environment business.industry Photovoltaic system Energy Engineering and Power Technology Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Pyrophoricity Renewable energy Fuel Technology Semiconductor Chemistry (miscellaneous) Photovoltaics 0103 physical sciences Materials Chemistry Deposition (phase transition) Electricity 0210 nano-technology business |
| Zdroj: | ACS Energy Letters. 2:2270-2282 |
| ISSN: | 2380-8195 |
| DOI: | 10.1021/acsenergylett.7b00633 |
| Popis: | III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. We consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics. |
| Databáze: | OpenAIRE |
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