ZnO thin film transistors for more than just displays

Autor:	Kaige G. Sun, J. Israel Ramirez, Thomas N. Jackson, Haoyu U. Li, Yuanyuan V. Li, Yiyang Gong
Rok vydání:	2015
Předmět:	Stress (mechanics) Atomic layer deposition Materials science Thin-film transistor business.industry Logic gate Electronic engineering Microelectronics Optoelectronics Plasma Radius business Electronic circuit
Zdroj:	2015 IEEE International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm.2015.7409736
Popis:	We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f1986efda9c0b2ef9e953ad96967ee9f https://doi.org/10.1109/iedm.2015.7409736 Zobrazit plný text záznamu