| Autor: |
Samir Chaudhry, Tony Ivanov, Y.F. Chyan, Robert Y.S. Huang, I.C. Kizilyalli, A. Chen, Samuel Suresh Martin, Michel Ranjit Frei, W.J. Nagy, Minseok Oh, M.J. Thoma, R.W. Dail, M.S. Carroll, C.A. King, V.D. Archer, W.T. Cochran, K.H. Lee, Kwok K. Ng |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198). |
| DOI: |
10.1109/bipol.1998.741900 |
| Popis: |
A 0.25-/spl mu/m modular high-energy implanted complementary BiCMOS (HEICBiC) technology has been developed for wireless-communication VLSIs. The technology demonstrates a high f/sub T/=52 GHz and a high f/sub T/BV/sub CEO/=160 GHz-V for single-poly emitter NPN transistors and a high f/sub T/=10.7 GHz for implanted-emitter PNP transistors. It is one of the best results for single-poly BiCMOS/bipolar technologies without an epitaxial buried collector. In comparison with 0.25-/spl mu/m NMOS, HEICBiC shows lower power consumption and higher RF performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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