| Popis: |
For low-dimensional semiconductor systems, matrix elements of optical dipole transitions versus different directions of the radiation polarization vector have been analyzed in detail. Analytical and numerical calculations are performed for quantum-well heterostructures in III-V semiconductor compounds. An influence of the spectral broadening due to intrasubband relaxation of current carriers on the transformation of light emission spectra in TE and TM modes with excitation has been studied. Distributions of electromagnetic wave fields and the optical confinement factor for TE and TM modes in multiple quantum-well layer structures, including a novel type of asymmetric heterostructures, have been determined. For quantum-wire structures, including a novel type of asymmetric heterostructures, have ben determined. For quantum-wire structures, the degree of light emission polarization has been examined and effects in porous Si luminescence are explained.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
