Dose dependence of the silicon near‐surface modifications caused by CF4reactive ion‐beam etching

Autor:	J. P. Gilles, J.P. Grandchamp, E. Collard, P. Scheiblin, C. Lejeune
Rok vydání:	1989
Předmět:	Auger electron spectroscopy Silicon chemistry Etching (microfabrication) Ellipsometry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Reactive-ion etching Electron spectroscopy Overlayer Ion
Zdroj:	Journal of Applied Physics. 65:2156-2159
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.342871
Popis:	The ion dose dependence of the silicon near‐surface modifications caused by CF4 reactive ion‐beam etching was studied using on‐line variation of SiF4 partial pressure, ellipsometry, and Auger electron spectroscopy. The existence of two critical doses is demonstrated. Beyond the lower critical dose, of about 5×1016 cm−2 according to the beam parameters, the steady state of the carbonaceous overlayer is reached, and the overlayer can be removed effectively by a simple dip in concentrated HF for 60 s, thus allowing the diagnostics of the damage of the underlying silicon. On the other hand, the silicon near surface is still modified up to a second critical dose, for which the steady state of both the overlayer and Si subsurface is then reached. Likewise, the conditions to minimize the contamination of the underlying crystal, as a function of the ion dose, are achieved.The ion dose dependence of the silicon near‐surface modifications caused by CF4 reactive ion‐beam etching was studied using on‐line variation of SiF4 partial pressure, ellipsometry, and Auger electron spectroscopy. The existence of two critical doses is demonstrated. Beyond the lower critical dose, of about 5×1016 cm−2 according to the beam parameters, the steady state of the carbonaceous overlayer is reached, and the overlayer can be removed effectively by a simple dip in concentrated HF for 60 s, thus allowing the diagnostics of the damage of the underlying silicon. On the other hand, the silicon near surface is still modified up to a second critical dose, for which the steady state of both the overlayer and Si subsurface is then reached. Likewise, the conditions to minimize the contamination of the underlying crystal, as a function of the ion dose, are achieved.
Databáze:	OpenAIRE
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