Resist surface investigations for reduction of Line-Edge-Roughness in Top Surface Imaging technology
| Autor: | L. Van den hove, A.M. Goethals, T. Sugihara, F. Van Roey, Kurt G. Ronse |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Surface (mathematics)
Measurement method business.industry Atomic force microscopy Chemistry Scanning electron microscope Condensed Matter Physics Line edge roughness Line width Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics Resist Surface roughness Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 46:339-343 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(99)00099-4 |
| Popis: | The Line-Edge-Roughness (LER) of resist pattern on fine feature has been characterised by means of top/down line width measurements by SEM in Top Surface Imaging (TSI) technology. The resist surface investigation using AFM has provided a correlation between resist Surface Roughness (SR) and the formation mechanism of LER. LER has been improved to 7 nm at 0.18 @mm dense patterns by the optimisation of dry development conditions based on these resist surface investigation. |
| Databáze: | OpenAIRE |
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