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A series of polycrystalline InGaN films have been grown on fused silica glass using a plasma assisted molecular beam epitaxy (PAMBE) system. Films grown at 600 °C showed pronounced signs of indium segregation, with indium segregating to the substrate interface and film surface, to the point where an essentially In-free intermediate layer was formed. For high indium content InGaN and InN films, homogeneity was substantially improved upon reduction of the growth temperature. In these homogeneous films the PL peak position moves to lower energy with increasing In content, with a PL peak position of 0.8 eV measured for a pure InN film. For the InGaN films, the comparatively broad PL spectra could be separated into two Gaussian peaks. One peak shifted to high energy with increasing temperature, while the other exhibited a more complex behavior. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
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