Analysis and design of sub-μW bandgap references in nano-meter CMOS

Autor:	Tor Sverre Lande, Kin Keung Lee
Rok vydání:	2013
Předmět:	Engineering CMOS Nanoelectronics Band gap business.industry Electrical engineering Optoelectronics Trimming Integrated circuit design business Sensitivity (electronics) Temperature coefficient Absolute zero
Zdroj:	MWSCAS
DOI:	10.1109/mwscas.2013.6674593
Popis:	Analysis and design of nano-watt (nW) bandgap references (BGR) in nano-meter (nm) CMOS are presented. Three different BGR topologies are studied and design trade-offs are discussed. Based on the analysis results, a BGR is fabricated in a TSMC 90 nm CMOS process. A special feature is that it can generate proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) current individually which enables more possibility of system co-design. Measurements show temperature coefficient and line sensitivity without trimming are 47.1 ppm/°C and 0.8 %/V respectively. The power consumption of the BGR core with a 1.2 V supply is 315 nW at room temperature. The core area is 0.026 mm2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f16e80b8a6b17475b1c6fdadc8d0a902 https://doi.org/10.1109/mwscas.2013.6674593 Zobrazit plný text záznamu