Self organized InAs quantum dots grown on patterned GaAs substrates
| Autor: | Aaron Maxwell Andrews, Gottfried Strasser, M. Austerer, Tomas Roch, Matthias Schramboeck, Werner Schrenk |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Atomic force microscopy Nanotechnology Condensed Matter Physics Isotropic etching Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Quantum dot Optoelectronics Electrical and Electronic Engineering business Luminescence Lithography |
| Zdroj: | Microelectronic Engineering. 83:1573-1576 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2006.01.108 |
| Popis: | GaAs substrates were patterned using holographic lithography and wet chemical etching. InAs quantum dots (QDs) grown on these substrates showed an alignment and an improved homogeneity compared to QDs grown on unpatterned GaAs. This was confirmed by atomic force microscopy and photo luminescence measurements. The use of an InGaAs stressor layer was also studied and could significantly improve the formation of QDs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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