The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon
| Autor: | Nadiia Korsunska, T. R. Staraya, B. M. Bulakh, L.Yu. Khomenkova, M. K. Sheĭnkman |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Photoluminescence Silicon Infrared Exciton technology industry and agriculture Analytical chemistry Nanocrystalline silicon chemistry.chemical_element equipment and supplies Condensed Matter Physics Porous silicon Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry Charge carrier Crystallite |
| Zdroj: | Semiconductors. 40:598-604 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782606050150 |
| Popis: | The photoluminescence spectra of porous silicon and their temperature dependences and transformations on aging are studied. It is shown that the infrared band prevailing in the spectra of as-prepared samples is due to exciton recombination in silicon crystallites. On aging, a well-pronounced additional band is observed at shorter wavelengths of the spectra. It is assumed that this band is due to the recombination of carriers that are excited in silicon crystallites and recombine via some centers located in oxide. It is shown that the broad band commonly observable in oxidized porous silicon is a superposition of the above two bands. The dependences of the peak positions and integrated intensities of the bands on time and temperature are studied. The data on the distribution of oxide centers with depth in the porous layer are obtained. |
| Databáze: | OpenAIRE |
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