Electrostatic effects of interface states on carrier transport in semiconductor heterojunctions
| Autor: | H. C. Card |
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| Rok vydání: | 1979 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 50:2822-2825 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.326194 |
| Popis: | A theory of the electronic transport properties of contacts between two dissimilar semiconductors is presented, which includes the effects of bias‐dependent interface state charge on the electrostatic potential distribution in the contact. The quasi‐Fermi level for the interface states is determined by the competition between the capture of electrons and holes at the interface for a given bias voltage. The conditions for diffusion‐limited or thermionic‐emission‐limited current flow are defined in terms of heterojunction parameters and material properties. Ignoring the direct recombination currents through interface states, the interface states have no effect on diffusion‐limited current, but when the transport is limited by the thermionic emission of carriers there are pronounced electrostatic effects on this current from interface states. A limiting density of interface states ∼1011–1012 cm−2 eV−1 has been established above which the current‐voltage (J‐V) relations are independent of the parameters chara... |
| Databáze: | OpenAIRE |
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