Effects of Gate/Blocking Oxide Energy Barrier on Memory Characteristics in Charge Trap Flash Memory Cells

Autor:	Jang-Gn Yun, Seongjae Cho, Jong-Ho Lee, Il Han Park, Gil Sung Lee, Won-Bo Shim, Wandong Kim, Se Hwan Park, Junghoon Lee, Yoon Kim, Doo-Hyun Kim, Byung-Gook Park, Dong Hua Li, Hyungcheol Shin
Rok vydání:	2015
Předmět:	chemistry.chemical_compound Materials science chemistry business.industry Blocking (radio) Charge trap flash Oxide Optoelectronics General Materials Science business Energy (signal processing)
Zdroj:	Nanoscience and Nanotechnology Letters. 7:594-598
ISSN:	1941-4900
DOI:	10.1166/nnl.2015.2002
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f14080378426faf701d3414987866125 https://doi.org/10.1166/nnl.2015.2002 Zobrazit plný text záznamu