Ultra-high resolution electron microscopy of defects in the CVD diamond structure
| Autor: | S. Delclos, François Silva, Alix Gicquel, D. Dorignac, F. Phillipp |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Silicon business.industry Mechanical Engineering Material properties of diamond Resolution (electron density) chemistry.chemical_element General Chemistry Chemical vapor deposition Electronic Optical and Magnetic Materials law.invention Crystallography Carbon film chemistry law Materials Chemistry Optoelectronics Electrical and Electronic Engineering Dislocation Electron microscope business Stacking fault |
| Zdroj: | Diamond and Related Materials. 7:222-227 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(97)00213-6 |
| Popis: | An elucidation of defect core structures in diamond thin films prepared by microwave plasma-assisted chemical vapour deposition (CVD) on silicon substrates is reported. The defects have been identified by ultra-high resolution electron microscopy (UHREM) at 0.15 nm resolution and associated image calculations. Three-dimensional atomic-scale models are proposed for three illustrative examples. The first two result from the interaction between a ∑ = 3 twin and (i) a perfect 60° dislocation and also (ii) a dissociated 0° dislocation. The last one (iii) consists of an original intrinsic stacking fault step. To our knowledge, it is the first time that such a type of defect has been reported. The experimental applicability of UHREM to the study of such complex defect configurations is also confirmed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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