GaN/AlGaN nanostructures for intersubband optoelectronics
| Autor: | Laurent Nevou, P. K. Kandaswamy, Maria Tchernycheva, F. H. Julien, Eva Monroy, Alon Vardi, Gad Bahir, A. Wirthmüller, Samuel E. Schacham, Juliette Mangeney, H. Macchadani |
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| Rok vydání: | 2010 |
| Předmět: |
Absorption spectroscopy
Photodetector Gallium nitride 02 engineering and technology 01 natural sciences 7. Clean energy Optical switch chemistry.chemical_compound 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Quantum well 010302 applied physics Chemistry business.industry Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Wavelength Quantum dot Excited state Optoelectronics 0210 nano-technology business |
| Zdroj: | physica status solidi (a). 207:1421-1424 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.200983565 |
| Popis: | We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17 × 17 μm 2 size provide a frequency response above 10 GHz at 1.5 μm wavelength. |
| Databáze: | OpenAIRE |
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