A Novel Sense-Amplifier and Plate-Line Architecture for Ferroelectric Memories
| Autor: | Rainer Waser, Steve Gilbert, Cezary Pietrzyk, James W Grace, Scott R. Summerfelt, John Y. Fong, Theodore S. Moise, Hugh P. McAdams, Angela Wang, Dave Lee, Jun Amano, Ralph H. Lanham, Jürgen T. Rickes |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Sense amplifier Electrical engineering Sense (electronics) Condensed Matter Physics Chip Capacitance Line (electrical engineering) Electronic Optical and Magnetic Materials CMOS Hardware_GENERAL Control and Systems Engineering Ferroelectric RAM Hardware_INTEGRATEDCIRCUITS Materials Chemistry Ceramics and Composites Electrical and Electronic Engineering business Voltage |
| Zdroj: | Integrated Ferroelectrics. 48:109-118 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | We present a novel sense-amplifier for FeRAM that is about 2.5 times faster than the conventional sense-amplifier. In addition, it has truly independent sense and write-back capability and resolves the well-known bit-line capacitance imbalance issues. Moreover, thanks to separate write-back, data can be started on its path to the chip's data output buffer, irrespective of the time required to accomplish the write-back. Furthermore, a new plate-line architecture that reduces the load per plate-line compared to conventional global plate-line schemes and employs full CMOS drivers is presented. A boosted gate voltage is not required. Therefore, it is ideal for ultra-low voltage operation. For a ferroelectric memory in 0.13 w m CMOS technology that employs the new sense amplifier and the new plate-line architecture a simulated read/write cycle time of |
| Databáze: | OpenAIRE |
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