A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

Autor:	Sven Loquai, Bernhard Schmauss, Olaf Ziemann, Christian-Alexander Bunge, Roman Kruglov
Rok vydání:	2010
Předmět:	Physics Frequency response business.industry Photodetector Carrier lifetime Atomic and Molecular Physics and Optics Cutoff frequency Photodiode law.invention Wavelength symbols.namesake Optics Fourier transform law symbols Diffusion (business) business
Zdroj:	Journal of Lightwave Technology. 28:2646-2653
ISSN:	1558-2213 0733-8724
DOI:	10.1109/jlt.2010.2059372
Popis:	A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to -35 dB).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f1316c7e9a72c5f1184dfa400f8300cb https://doi.org/10.1109/jlt.2010.2059372 Zobrazit plný text záznamu