Enhanced thermoelectric properties of atomic-layer-deposited Hf:Zn16O/18O superlattice films by interface-engineering
| Autor: | Jing-Jong Shyue, Wen-Pin Hsieh, Bo-Wei Shih, Feng-Yu Tsai |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Phonon scattering Process Chemistry and Technology Superlattice Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic radius Thermal conductivity Phase (matter) Seebeck coefficient 0103 physical sciences Thermoelectric effect Materials Chemistry Ceramics and Composites Thin film 0210 nano-technology |
| Zdroj: | Ceramics International. 46:7122-7130 |
| ISSN: | 0272-8842 |
| Popis: | This study examines three novel approaches for enhancing the thermoelectric (TE) properties of atomic-layer-deposited (ALD) ZnO thin films: 1) Hf-doping, which preserved the crystallinity of ZnO and provided effective phonon scattering owing to Hf's similar atomic radius to and large mass difference with Zn, leading to high power factor (PF) and low thermal conductivity (κ); 2) controlling the distribution of Hf into an alternating scattered phase/clustered phase superlattice, which balanced the high PF of the scattered phases with the low κ of the clustered phases, while providing significant energy-filtering effect to raise the Seebeck coefficient; 3) introducing 18O/16O periodicity into the Hf:ZnO films—by alternately using H216O and H218O as oxidants in the ALD processes, which further suppressed κ without compromising PF. The combination of the three approaches resulted in a maximum improvement in ZT of ~1600% over that of the undoped ZnO. |
| Databáze: | OpenAIRE |
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