Scalability of Capacitive Hardening for Flip-Flops in Advanced Technology Nodes

Autor: Trey Reece, Z. J. Diggins, Lloyd W. Massengill, Rick Wong, N. N. Mahatme, T. D. Loveless, N. J. Gaspard, A. F. Witulski, S.-J. Wen, S. Jagannathan, Bharat L. Bhuva
Rok vydání: 2013
Předmět:
Zdroj: IEEE Transactions on Nuclear Science. 60:4394-4398
ISSN: 1558-1578
0018-9499
DOI: 10.1109/tns.2013.2286272
Popis: Capacitive radiation hardening by design (RHBD) techniques to reduce the single-event cross section of flip-flops are shown to be effective at highly scaled technology nodes, especially for the terrestrial environment. Test results for different values of RHBD capacitance for both 40 nm and 28 nm technology node designs show that small values of RHBD capacitance (
Databáze: OpenAIRE